POLARIZED RESONANCE RAMAN-SCATTERING OF IODINE-DOPED POLYACETYLENE WITH HIGH-CONDUCTIVITY

Citation
Dk. Wang et al., POLARIZED RESONANCE RAMAN-SCATTERING OF IODINE-DOPED POLYACETYLENE WITH HIGH-CONDUCTIVITY, Synthetic metals, 65(2-3), 1994, pp. 117-122
Citations number
22
Categorie Soggetti
Physics, Condensed Matter","Metallurgy & Mining
Journal title
ISSN journal
03796779
Volume
65
Issue
2-3
Year of publication
1994
Pages
117 - 122
Database
ISI
SICI code
0379-6779(1994)65:2-3<117:PRROIP>2.0.ZU;2-S
Abstract
We investigated the structure and alignment of iodine dopant in the hi ghly conducting polyacetylene (HCPA) with different doping concentrati on by using polarized resonance Raman spectroscopy (PRRS). It was foun d for the first time that the I3- species is predominant in the highly stretched HCPA film even for the highly doping level ((CHI0.25)x), in contrast with traditional polyacetylene. We also observed that the in tensity ratio of I3-/I5- and the orientation of I3- species increase g reatly with increasing initial draw ratio of the polyacetylene films.