K. Nishio et al., INTENSITY MEASUREMENT OF EQUAL-THICKNESS FRINGES IN TEM IMAGES OF WEDGE-SHAPED GAAS AND INP CRYSTALS BY A SLOW-SCAN CCD CAMERA, Journal of Electron Microscopy, 43(4), 1994, pp. 198-202
Exact measurement of profile intensity of thickness fringes has been c
arried out in TEM images of a GaAs crystal and an InP crystal, by usin
g a slow-scan CCD camera. The crystals have 90 degrees wedge-shape wit
h the (110) and ((1) over bar 10) surfaces, and are axially illuminate
d by a 175-keV electron beam along the [100] axes. The intensities, me
asured in bright field and 002, 022, and 004 dark field images, are sh
own as reliable experimental data on the electron diffraction. A multi
-slice simulation program is checked by comparing the calculated diffr
action intensities with the experimental data.