ELECTRON-CYCLOTRON-RESONANCE PLASMA DEPOSITION AS A PROMISING TECHNIQUE FOR LOW-TEMPERATURE HARD COATINGS

Si3N4 and SiC films have been deposited by electron cyclotron resonanc e (ECR) plasma at low substrate temperatures (T-s less than or equal t o 150 degrees C). Films prepared by this new technique exhibited bette r properties than those deposited by other plasma methods. Different g as ratios and microwave powers have been used. The films have been ana lysed by infrared spectrometry and spectroscopic ellipsometry. Si3N4 a nd SiC films show in general a good thickness homogeneity (< 4% in 3 i n. wafers) and reproducibility. Depending on the process parameters we have found growth rates up to 3500 Angstrom min(-1) for Si3N4 and 400 Angstrom min(-1) for SiC. The infrared spectra of these layers have s hown no signal of Si-H and N-H bonds in the Si3N4 films and low traces of Si-H and C-H-n bonds in the SiC films.