CHARACTERIZATION OF ZR THIN-FILMS GROWN BY DUAL ION-BEAM SPUTTERING

Zr thin films (100-600 nm) have been deposited on pyrex substrates at different temperatures (50-200 degrees C) in a double ion beam sputter ing system (residual pressure < 10(-7) torr) using Ar+ ions for both s puttering and irradiation of the growing film. The films have been cha racterized by XRD, resistivity measurements and optical microscopy. Th e results show that, depending on the flux and energy of the ions impi nging the growing film, the films develop compressive and tensile stre sses which clearly influence their adherence and consequently their st ability against exposure to the atmosphere.