INFLUENCE OF THE TARGET SHIELD DISTANCE ON THE COATINGS DEPOSITION BYRF MAGNETRON SPUTTERING/

In sputtering processes a shield is usually placed around the cathode/ target to avoid the formation of the glow discharge in those zones and limit the sputtering to the surface directed forward of the substrate . The influence of the target/shield distance (d) on the target potent ial, deposition rate and morphology of the films obtained in rf magnet ron sputtering equipment was studied. The depositions were carried out with and without negative substrate bias from two different targets. For target/shield distances higher than 1 mm only small variations wer e detected on the target potential and deposition rate; for this last parameter the maximum values occurred for d in the range 2 to 4 mm; ne vertheless, for d lower than 1 mm these factors show much lower values . The morphology of the films is always very compact and 'featureless' , for all deposition conditions.