The interface between different ceramic thin films and the Si(1OO) sub
strate has been studied by means of secondary ion mass spectrometry an
d X-ray photoelectron spectroscopy. The deposited materials have been
yttria-stabilized zirconia (YSZ) and strontium titanate. Because these
materials are currently used as a buffer layer to deposit superconduc
ting YBa2Cu3O7-X (YBCO) films on silicon, it is interesting to know th
eir degree of reactivity with silicon, as well as with YBCO. The resul
ts indicate a low reactivity between YSZ and silicon, whereas a relati
vely important reaction of SrTiO3 with silicon is observed.