TEMPERATURE-DEPENDENT THRESHOLD VOLTAGE MODEL FOR A NONUNIFORMLY DOPED SHORT-CHANNEL MOSFET

Authors
KHANNA MK HALDAR S GUPTA RS
Citation
Mk. Khanna et al., TEMPERATURE-DEPENDENT THRESHOLD VOLTAGE MODEL FOR A NONUNIFORMLY DOPED SHORT-CHANNEL MOSFET, International journal of electronics, 77(3), 1994, pp. 283-290
Citations number
10
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
International journal of electronics → ACNP
ISSN journal
00207217
Volume
77
Issue
3
Year of publication
1994
Pages
283 - 290
Database
ISI
SICI code
0020-7217(1994)77:3<283:TTVMFA>2.0.ZU;2-X
Abstract
A semi-empirical temperature-dependent threshold voltage model of a no n-uniformly doped short channel MOSFET is developed. The analysis incl udes the fringing field effect and is almost independent of any curve- fitting parameter. An expression so derived gives a clearer understand ing of the temperature dependence of the threshold voltage and the len gth-dependent short channel parameter F1.