PLASMON-PHONON MODES AND CLUSTERING EFFECTS IN RAMAN-SPECTRA OF N-INXGA1-XAS

Authors
MINTAIROV AM MAZYRENKO DM
Citation
Am. Mintairov et Dm. Mazyrenko, PLASMON-PHONON MODES AND CLUSTERING EFFECTS IN RAMAN-SPECTRA OF N-INXGA1-XAS, International journal of electronics, 77(3), 1994, pp. 309-316
Citations number
12
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
International journal of electronics → ACNP
ISSN journal
00207217
Volume
77
Issue
3
Year of publication
1994
Pages
309 - 316
Database
ISI
SICI code
0020-7217(1994)77:3<309:PMACEI>2.0.ZU;2-T
Abstract
Theoretical and experimental investigations on Raman scattering spectr a of optical phonons and plasmon-phonon modes of undoped and Si-doped InxGa1-xAs (n almost-equal-to 10(15)-10(19), x = 0.05-0.3) are present ed. It is shown that optical phonons of InxGa1-xAs for x = 0.1-0.3 hav e three mode behaviour and an additional band in the Raman spectra of this ternary alloy is associated with clusters having (GaAs)1(InAs)1 s uperlattice structure. The parameters of optical phonons and plasmons of n-InxGa1-xAs are measured.