DAMAGE PROFILES IN SILICON TILT ANGLES BOMBARDED BY HIGH-ENERGY CU IONS

High energy (MeV) Cu ions were implanted into n-type Si samples at ang les of 7 degrees, 30 degrees, 45 degrees, and 60 degrees. The doses we re 5X10(14) and 2X10(14) ions/cm(2). The damage profiles in Si(100) we re investigated by a Rutherford backscattering/channeling technique wi th 2.1 MeV He ions. The longitudinal damage straggling and lateral dam age spread are estimated for 1.0 MeV Cu+ implanted in Si(100). The val ues obtained are compared with the TRIM (transport of ions in matter) code. The results show that the longitudinal damage straggling is foun d to be in good agreement with the calculated one within 13% by use of the TRIM code, but the experimental value of the lateral damage sprea d is higher than the calculated one by about 28% using the TRIM code. The effect of dose rate, energy, and dose on damage distribution is in vestigated also.