CATHODOLUMINESCENT CHARACTERISTICS OF ZNGA2O4 PHOSPHOR GROWN BY RADIO-FREQUENCY MAGNETRON SPUTTERING

Citation
Ij. Hsieh et al., CATHODOLUMINESCENT CHARACTERISTICS OF ZNGA2O4 PHOSPHOR GROWN BY RADIO-FREQUENCY MAGNETRON SPUTTERING, Journal of applied physics, 76(6), 1994, pp. 3735-3739
Citations number
15
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
76
Issue
6
Year of publication
1994
Pages
3735 - 3739
Database
ISI
SICI code
0021-8979(1994)76:6<3735:CCOZPG>2.0.ZU;2-S
Abstract
Low voltage cathodoluminescent characteristics of ZnGa2O4 phosphor gro wn by rf magnetron sputtering have been investigated from 300 to 700 n m. The effects of substrate heating and annealing treatment on the lum inescent characteristics are also studied. A blue cathodoluminescent e mission peaked at 470 nm is observed. Better luminescent properties ar e achieved on the films which have crystal structure with a standard p owder x-ray diffraction pattern of ZnGa2O4. The effect of the strength of the ligand field on the resultant energy levels for the ZnGa2O4 ph osphor is investigated. Low-voltage phosphor films with excellent cath odoluminescent characteristics have been successfully developed in thi s research.