OPTICAL FUNCTIONS OF SILICON AT ELEVATED-TEMPERATURES

Citation
Ge. Jellison et Fa. Modine, OPTICAL FUNCTIONS OF SILICON AT ELEVATED-TEMPERATURES, Journal of applied physics, 76(6), 1994, pp. 3758-3761
Citations number
13
Categorie Soggetti
Physics, Applied
Journal title
ISSN journal
00218979
Volume
76
Issue
6
Year of publication
1994
Pages
3758 - 3761
Database
ISI
SICI code
0021-8979(1994)76:6<3758:OFOSAE>2.0.ZU;2-3
Abstract
The optical functions of silicon have been measured accurately at elev ated temperatures using the two-channel spectroscopic polarization mod ulation ellipsometer. The wavelength region covered is 240-840 nm (5.1 6-1.47 eV), and the temperature region covered is room temperature to 490 degrees C. Using this data, the refractive index n iind the extinc tion coefficient k are both parameterized as functions of temperature T and photon energy E for photon energies below the direct band edge o f silicon (similar to 3.36 eV or 370 nm). In this range, n (E,T) can l ie fit with five parameters, and k(E,T) can be fit with six parameters .