METAL INSULATOR/SEMICONDUCTOR TUNNEL-DIODES FORMED BY THE OXIDATION OF POLYCRYSTALLINE DIAMOND FILMS/

Authors
GONON P DENEUVILLE A GHEERAERT E FONTAINE F LENORMAND F
Citation
P. Gonon et al., METAL INSULATOR/SEMICONDUCTOR TUNNEL-DIODES FORMED BY THE OXIDATION OF POLYCRYSTALLINE DIAMOND FILMS/, Journal of applied physics, 76(6), 1994, pp. 3929-3931
Citations number
10
Categorie Soggetti
Physics, Applied
Journal title
Journal of applied physics → ACNP
ISSN journal
00218979
Volume
76
Issue
6
Year of publication
1994
Pages
3929 - 3931
Database
ISI
SICI code
0021-8979(1994)76:6<3929:MITFBT>2.0.ZU;2-R
Abstract
Polycrystalline diamond films have been annealed under O-2 at 600 degr ees C, or have been dipped in a H2SO4/CrO3 solution. Both treatments r esult in the formation of a thin electrically insulating layer at the top of the films. Subsequent metallization results in the formation of a metal/insulated diamond tunnel diode with a potential barrier for h oles of 0.85 eV, and with a Fermi level localized at about 0.45 eV abo ve the diamond valence band.