GROWTH OF SILICON-CARBIDE FILMS VIA C-60 PRECURSORS

Epitaxial silicon carbide films are grown on Si(100) and Si(111) subst rates at surface temperatures between 950 and 1250 K via C60 precursor s. Films have been grown up to thicknesses greater than 1 mum. The gro wth rate of the SiC film is not limited by the surface reaction rate o f C60 with silicon at these temperatures, rather by the arrival rate o f the reactants Si (by diffusion) or C60. This results in rapid film g rowth. Films have been characterized by low energy electron diffractio n, X-ray diffraction, and Auger depth profiling. X-ray diffraction sug gests the growth of beta-SiC in the temperature range investigated. Au ger depth profiling shows the film is stoichiometric. Selective crysta lline silicon carbide growth is achieved on patterned silicon-silicon oxide samples.