Epitaxial silicon carbide films are grown on Si(100) and Si(111) subst
rates at surface temperatures between 950 and 1250 K via C60 precursor
s. Films have been grown up to thicknesses greater than 1 mum. The gro
wth rate of the SiC film is not limited by the surface reaction rate o
f C60 with silicon at these temperatures, rather by the arrival rate o
f the reactants Si (by diffusion) or C60. This results in rapid film g
rowth. Films have been characterized by low energy electron diffractio
n, X-ray diffraction, and Auger depth profiling. X-ray diffraction sug
gests the growth of beta-SiC in the temperature range investigated. Au
ger depth profiling shows the film is stoichiometric. Selective crysta
lline silicon carbide growth is achieved on patterned silicon-silicon
oxide samples.