ALKOXY-DERIVED Y2O3-STABILIZED ZRO2 THIN-FILMS

Polycrystalline cubic yttria-stabilized zirconia films ZrO2(Y2O3) with the thickness of 0.2-0.5 mu m on silicon and sapphire substrates have been prepared by the sol-gel process. The most stable sols for film a pplication have been obtained by anodic dissolution of yttrium in meth oxyethanol solutions of zirconium butoxide in methoxyethanol. The prop erties of ZrO2(Y2O3) are significantly governed by annealing condition s. The best properties are demonstrated by the films annealed at 600-7 00 degrees C. High annealing temperature (higher than 900 degrees C) l eads to degradation of the film properties owing to mechanical stress and silicon oxidation. Some dielectric properties, and most of all, th e silicon-dielectric interface quality of the sol-gel films are superi or to the sputtered films. The sol-gel films have been successfully us ed as barrier layers for preparation of high temperature superconducti ng Bi2Sr2CaCu2Oy films on sapphire substrates, however, they could not be used as barriers in the case of silicon substrates.