The plasma polymerization of hexamethyl disiloxane (HMDSO), divinyltet
ramethyl disiloxane (DVTMDSO), and octamethyl cyclotetrasiloxane (OMCA
TS) was investigated using either argon or argon/oxygen mixtures as re
actants. With argon, different mechanisms of polymerization for each p
olymer were identified reflecting its respective nature. For HMDSO, fo
rmation of Si-CH2-Si bonds plays a decisive role, whereas in DVTMDSO S
i-(CH2)(4)-Si bridges are formed. In both cases a second mechanism exi
sts leading to the loss of SiCxHy groups. Finally, OMCATS polymerizes
via the formation of polymethylsiloxane chains and rings. These variou
s mechanisms result in differences in the properties of the polymer fi
lms. In contrast, almost inorganic films were obtained with oxygen irr
espective of the monomer. An investigation of the deposition kinetics
shows that the plasma power and the monomer evaporation temperature ar
e the decisive parameters determining the polymer growth rates. A comp
arison of direct and remote plasma reaction reveals that in the cases
of HMDSO and OMCATS direct plasma dissociation is necessary to promote
the polymerization process, whereas DVTMDSO also polymerizes under re
mote conditions.