SEMIEMPIRICAL TIGHT-BINDING BAND-STRUCTURE OF II3V2 SEMICONDUCTORS - CD3P2, ZN3P2, CD3AS2, AND ZN3AS2

Semiempirical tight-binding electronic-energy-band structures of the f ollowing II3V2 semiconductors are presented: Cd3P2, Zn3P2, Cd3As2, and Zn3As2, The zinc-blende approximation of the real crystal structure w as used. The calculations were carried out within the nearest- and sec ond-nearest-neighbor approximation and the single s and p atomic-orbit al basis set. The tight-binding parameters were obtained empirically b y fitting calculated density of valence states and reflectivity spectr a to the empirical spectrum. The presented parametrization of the band structures provides an accurate representation of the valence bands a nd an adequate description of the lowest and most important conduction bands of II3V2 semiconductors.