S-CU-RELATED METASTABLE COMPLEX DEFECT IN SI BY OPTICAL-DETECTION OF MAGNETIC-RESONANCE

Citation
Wm. Chen et al., S-CU-RELATED METASTABLE COMPLEX DEFECT IN SI BY OPTICAL-DETECTION OF MAGNETIC-RESONANCE, Physical review. B, Condensed matter, 50(11), 1994, pp. 7365-7370
Citations number
25
Categorie Soggetti
Physics, Condensed Matter
ISSN journal
01631829
Volume
50
Issue
11
Year of publication
1994
Pages
7365 - 7370
Database
ISI
SICI code
0163-1829(1994)50:11<7365:SMCDIS>2.0.ZU;2-R
Abstract
We present experimental results obtained on a S-Cu-related metastable complex defect in Si, by optical detection of magnetic resonance (ODMR ) at the X band and the K band. Two photoluminescence emissions arisin g from the bound-exciton (BE) recombination at the defect in two diffe rent configurations were monitored in the ODMR experiments. The spin-t riplet nature of the lowest BE state for both BE's was confirmed. The symmetry of each configuration has been determined to be monoclinic-I and triclinic, respectively. The unusually broad ODMR linewidth is arg ued to originate from unresolved hyperfine interaction with a copper a tom involved in the defect, at which the primary bound particle (i.e., the hole) of the BE is highly localized. The configurational metastab ility has been demonstrated in the ODMR experiments.