Wm. Chen et al., S-CU-RELATED METASTABLE COMPLEX DEFECT IN SI BY OPTICAL-DETECTION OF MAGNETIC-RESONANCE, Physical review. B, Condensed matter, 50(11), 1994, pp. 7365-7370
We present experimental results obtained on a S-Cu-related metastable
complex defect in Si, by optical detection of magnetic resonance (ODMR
) at the X band and the K band. Two photoluminescence emissions arisin
g from the bound-exciton (BE) recombination at the defect in two diffe
rent configurations were monitored in the ODMR experiments. The spin-t
riplet nature of the lowest BE state for both BE's was confirmed. The
symmetry of each configuration has been determined to be monoclinic-I
and triclinic, respectively. The unusually broad ODMR linewidth is arg
ued to originate from unresolved hyperfine interaction with a copper a
tom involved in the defect, at which the primary bound particle (i.e.,
the hole) of the BE is highly localized. The configurational metastab
ility has been demonstrated in the ODMR experiments.