EQUILIBRIUM TEMPERATURE IN INTRINSIC HYDROGENATED AMORPHOUS-SILICON UNDER ILLUMINATION

The influence of illumination on the thermal equilibrium temperature o f the defect structure in undoped a-Si:H has been studied by measureme nts of the defect density versus temperature up to 290 degrees C. It w as found that the light-induced excess carrier concentration leads to a decrease of the thermal equilibrium temperature depending on the car rier generation rate. This behavior is consistent qualitatively as wel l as quantitatively with a phenomenological model recently developed o ver a wide range of carrier generation rates.