2-PHONON RESONANT MAGNETO-RAMAN SCATTERING FROM DIRECT-GAP SEMICONDUCTORS

The efficiency of two-phonon resonant Raman scattering in high magneti c fields is calculated for the intraband Frolich interaction of uncorr elated electrons and holes at the direct gap of a III-V or II-VI semic onductor with longitudinal optical (LO) phonons. We consider the case of different electron and hole effective masses, and take hole-mass an isotropy into account. Oscillations of the scattering efficiency with magnetic field and laser energy can be grouped into three types of res onances: incoming, outgoing, and intermediate ones, according to the r espective real intermediate states at the bottom of the Landau bands. Calculated magneto-Raman intensity profiles and resonance fan plots ar e compared with experimental data for GaAs. Most of the observed reson ances are classified.