FINE-STRUCTURE OF ELECTRON-TRANSMISSION SPECTRA ACROSS ALAS SINGLE BARRIERS

We propose a general approach to the problem of intervalley mixing of electron states in heterostructures in the effective-mass method. The method has been used to calculate electron-transmission spectra across GaAs(AlAs)(M)GaAs single-barrier structures taking into account the G amma-X mixing at interfaces. The spectra exhibit sharp peaks and dips connected with the electron resonant transmission through quasibound X -like states in the AlAs layer. The peak and dip sequence depends on t he parity of M. The developed approach allows us to present the energy dependence of transmission probability in an analytical form. The low -temperature de current-voltage characteristics of the single-barrier structure has been derived making allowance for the camel-back X-band structure in bulk AlAs and GaAs.