IDENTIFICATION OF NEUTRAL BOND-CENTERED MUONIUM IN N-TYPE SEMICONDUCTORS BY LONGITUDINAL MUON-SPIN RELAXATION

Authors
CHOW KH LICHTI RL KIEFL RF DUNSIGER S ESTLE TL HITTI B KADONO R MACFARLANE WA SCHNEIDER JW SCHUMANN D SHELLEY M
Citation
Kh. Chow et al., IDENTIFICATION OF NEUTRAL BOND-CENTERED MUONIUM IN N-TYPE SEMICONDUCTORS BY LONGITUDINAL MUON-SPIN RELAXATION, Physical review. B, Condensed matter, 50(12), 1994, pp. 8918-8921
Citations number
20
Categorie Soggetti
Physics, Condensed Matter
Journal title
Physical review. B, Condensed matter → ACNP
ISSN journal
01631829
Volume
50
Issue
12
Year of publication
1994
Pages
8918 - 8921
Database
ISI
SICI code
0163-1829(1994)50:12<8918:IONBMI>2.0.ZU;2-F
Abstract
We report measurements of the longitudinal field-dependent muon-spin r elaxation rate (T-1(-1)) in n-type Si and GaAs under conditions where coherent spin precession of muonium is unobservable. A peak in T-1(-1) as a function of magnetic field is observed and shown to be character istic of neutral bond-centered muonium (Mu(BC)(0)) experiencing spin-e xchange scattering with free carriers. These results establish that ne utral Mu(BC)(0) does not convert to negatively charged muonium in n-ty pe Si below approximately 200 K and is present in metallic n-type GaAs :Si at 5.5 K.