INVESTIGATION OF THE COMPLEX-REACTIONS OF SIH4 AND GEH4 IN THE ION-TRAP USING DYNAMICALLY PROGRAMMED SCANNING

The rate constants of the gas-phase reactions of primary ions in a 1 : 1 SiH4/GeH4 mixture have been determined by ion trap mass spectrometr y and compared with those obtained for SiH4 and for GeH4 alone. The ma in reaction pathways are hydride or hydrogen transfer, formation of io ns containing two silicon or two germanium atoms and ions containing s ilicon and germanium together. Experimental rate constants have been c ompared with the calculated collision rate constants and efficiencies have been determined. The formation of mixed ions, important in the ra diolytical preparation of materials of interest in photovoltaic techno logy, is more efficient when SiHm+ (m = 0, 1) ions react with GeH4 tha n when GeH+ reacts with SiH4, and occurs at comparable rates to SiH2and GeH2+ reacting with GeH4 and SiH4, respectively.