EVALUATION OF NEW HIGH-TEMPERATURE BORON SOLID PLANAR DIFFUSION SOURCES THROUGH P-N JUNCTION CHARACTERIZATION

The electrical characterization of p-n diodes fabricated using a newly developed high temperature (greater than or equal to 1100 degrees C) boron diffusion source consisting of a homogenous distribution of 9A1( 2)O(3).2B(2)O(3) in a SiC foam substrate was carried out and results w ere compared with those obtained using commercial sources. Specificall y, current-voltage and open circuit voltage decay measurements were pe rformed. The results obtained indicate that devices fabricated from th e new high temperature source perform satisfactorily, exhibiting chara cteristics that are comparable to the characteristics of devices fabri cated from the established commercial high temperature boron diffusion sources.