GROWTH MODES OF EPITAXIAL COPPER-FILMS ON C-SAPPHIRE

Authors
KNOLL E BIALAS H
Citation
E. Knoll et H. Bialas, GROWTH MODES OF EPITAXIAL COPPER-FILMS ON C-SAPPHIRE, Thin solid films, 250(1-2), 1994, pp. 42-46
Citations number
15
Categorie Soggetti
Physics, Applied","Material Science","Physics, Condensed Matter
Journal title
Thin solid films → ACNP
ISSN journal
00406090
Volume
250
Issue
1-2
Year of publication
1994
Pages
42 - 46
Database
ISI
SICI code
0040-6090(1994)250:1-2<42:GMOECO>2.0.ZU;2-V
Abstract
Usually copper grows on c-sapphire with orientation Cu(111)parallel to A1(2)O(3)(0001) with Cu[2 $($) over bar$$ 1 $$($) over bar 1] along A l2O3[2 $($) over bar$$ 1 $$($) over bar 10]. In the present work an ad ditional orientation is described. To understand this orientation, a m icroscopic model of roughness of the substrate crystal is proposed and verified.