STUDY OF PARAMETERS OF GAAS-LAYERS GROWN ON SI SUBSTRATES BY THE LIQUID-PHASE EPITAXY TECHNIQUE

Authors
ABRAMOV AV DERYAGIN NG TRETYAKOV DN FALEEV NN
Citation
Av. Abramov et al., STUDY OF PARAMETERS OF GAAS-LAYERS GROWN ON SI SUBSTRATES BY THE LIQUID-PHASE EPITAXY TECHNIQUE, Pis'ma v Zurnal tehniceskoj fiziki, 19(23), 1993, pp. 45-49
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
Pis'ma v Zurnal tehniceskoj fiziki → ACNP
ISSN journal
03200116
Volume
19
Issue
23
Year of publication
1993
Pages
45 - 49
Database
ISI
SICI code
0320-0116(1993)19:23<45:SOPOGG>2.0.ZU;2-S