Aa. Kovalevskii, ETCHING OF THIN-FILMS OF GERMANIUM-MODIFIED BOROPHOSPHOSILICATE GLASSES, Russian journal of applied chemistry, 66(11), 1993, pp. 1878-1883
The mechanism of liquid chemical and plasmochemical etching of boropho
sphosilicate thin films deposited in various vapor-gas mixtures has be
en studied. Differences in the etching rates increase from borophospho
rosilicate films deposited by simultaneous decomposition of heteroorga
nic compounds and hydrides to films deposited by decomposition of hydr
ides. For thin films deposited in various vapor-gas mixtures and modif
ied with germanium, the etching rates correlate with their structural
imperfection.