IMPROVEMENT IN MAGNETORESISTANCE OF VERY THIN PERMALLOY-FILMS BY POSTANNEALING

Authors
FUNAKI H OKAMOTO S KITAKAMI O SHIMADA Y
Citation
H. Funaki et al., IMPROVEMENT IN MAGNETORESISTANCE OF VERY THIN PERMALLOY-FILMS BY POSTANNEALING, JPN J A P 2, 33(9B), 1994, pp. 120001304-120001306
Citations number
12
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
33
Issue
9B
Year of publication
1994
Pages
120001304 - 120001306
Database
ISI
SICI code
Abstract
We prepared Ni80Fe20 films by the sputter-beam method and investigated their magnetotransport properties. The very thin film of 200 Angstrom exhibited a high magnetoresistance of 3.5% after an appropriate post- annealing treatment. The improvement is due to the decrease of zero-fi eld resistivity resulting from remarkable grain growth in the films. T aking into account diffusive electron scattering at the film surface, the magnetoresistance value is thought to be very close to that of the bulk.