VERY WEAK DEPENDENCE ON TEMPERATURE OF 980-NM INGAAS INGAASP/INGAP LASERS/

Authors
OHKUBO M IWAI N IJICHI T NINOMIYA T
Citation
M. Ohkubo et al., VERY WEAK DEPENDENCE ON TEMPERATURE OF 980-NM INGAAS INGAASP/INGAP LASERS/, JPN J A P 2, 33(9B), 1994, pp. 120001307-120001309
Citations number
6
Categorie Soggetti
Physics, Applied
Journal title
JAPANESE JOURNAL OF APPLIED PHYSICS PART 2-LETTERS → ACNP
Volume
33
Issue
9B
Year of publication
1994
Pages
120001307 - 120001309
Database
ISI
SICI code
Abstract
The effects of mirror loss on the characteristic temperature T-0 were studied for 980-nm strained-layer InGaAs single-quantum-well graded-re fractive-index separate-conlinement-heterostructure lasers with InGaP cladding layers. It was found that the lasers exhibited a very high T- 0 of over 300 K and strong dependence on temperature with change in th e mirror loss. Assuming the logarithmic current (J) -gain (G) relation G = G(0) ln (J/J(0)), these phenomena could be interpreted using the behavior of the temperature dependence of G(0).