KINETICS OF THE DROP IN ATTENUATION OF PHOTOCONTROLLED MICROWAVE MODULATORS BASED ON HIGH-RESISTANCE SILICON

Authors
BUTORIN OV SHVETSOV VP
Citation
Ov. Butorin et Vp. Shvetsov, KINETICS OF THE DROP IN ATTENUATION OF PHOTOCONTROLLED MICROWAVE MODULATORS BASED ON HIGH-RESISTANCE SILICON, Telecommunications & radio engineering, 48(4), 1993, pp. 115-118
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic",Telecommunications
Journal title
Telecommunications & radio engineering → ACNP
ISSN journal
00402508
Volume
48
Issue
4
Year of publication
1993
Pages
115 - 118
Database
ISI
SICI code
0040-2508(1993)48:4<115:KOTDIA>2.0.ZU;2-E
Abstract
A photocontrolled microwave modulator based on a silicon dielectric wa veguide is developed. Its fundamental properties are analyzed together with the dependence of the drop in attenuation on the illumination in tensity. The effect of composition materials on the modulator speed is examined and recommendations on the design of such devices are given.