SIMULTANEOUS FORMATION OF TITANIUM NITRIDE AND TITANIUM SILICIDE IN AONE-STEP PROCESS IN HETEROGENEOUS PHASE DURING MULTIPULSE LASER TREATMENT OF A SI WAFER WITH A THIN TI COATING IN SUPERATMOSPHERIC N2

We have succeeded in simultaneously conducting two chemical reactions resulting in the formation of titanium nitride and titanium silicide i n well-shaped clearly separated layers as an effect of multipulse exci mer laser treatment of a Si wafer with a thin Ti coating in an ambient N2 gas. We demonstrate by a numerical analysis that the parallel evol ution of the two reactions in a one-step process is a consequence of t he melting of both the Ti coating and of a thick layer of Si bulk in c onditions that completely avoided substance expulsion.