VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH 21-PERCENT EFFICIENCY BYMETALORGANIC VAPOR-PHASE EPITAXY

Citation
Kl. Lear et al., VERTICAL-CAVITY SURFACE-EMITTING LASERS WITH 21-PERCENT EFFICIENCY BYMETALORGANIC VAPOR-PHASE EPITAXY, IEEE photonics technology letters, 6(9), 1994, pp. 1053-1055
Citations number
15
Categorie Soggetti
Optics,"Physics, Applied
ISSN journal
10411135
Volume
6
Issue
9
Year of publication
1994
Pages
1053 - 1055
Database
ISI
SICI code
1041-1135(1994)6:9<1053:VSLW2E>2.0.ZU;2-E
Abstract
Proton implanted, vertical cavity top-surface emitting lasers exhibit the highest single-mode and multi-mode output powers, highest power co nversion efficiency, and lowest threshold voltage for such devices rep orted to date. These lasers use new mirror grading designs that are en abled by metalorganic vapor phase epitaxy's capabilities of alloy grad ing and carbon doping. The results validate this growth technology by exceeding the previous best results which were based on molecular beam epitaxy.