Proton implanted, vertical cavity top-surface emitting lasers exhibit
the highest single-mode and multi-mode output powers, highest power co
nversion efficiency, and lowest threshold voltage for such devices rep
orted to date. These lasers use new mirror grading designs that are en
abled by metalorganic vapor phase epitaxy's capabilities of alloy grad
ing and carbon doping. The results validate this growth technology by
exceeding the previous best results which were based on molecular beam
epitaxy.