SUBMILLIAMPERE THRESHOLD BURIED-HETEROSTRUCTURE INGAAS GAAS SINGLE-QUANTUM-WELL LASERS GROWN BY SELECTIVE-AREA EPITAXY/

Authors
LAMMERT RM COCKERILL TM FORBES DV SMITH GM COLEMAN JJ
Citation
Rm. Lammert et al., SUBMILLIAMPERE THRESHOLD BURIED-HETEROSTRUCTURE INGAAS GAAS SINGLE-QUANTUM-WELL LASERS GROWN BY SELECTIVE-AREA EPITAXY/, IEEE photonics technology letters, 6(9), 1994, pp. 1073-1075
Citations number
9
Categorie Soggetti
Optics,"Physics, Applied
Journal title
IEEE photonics technology letters → ACNP
ISSN journal
10411135
Volume
6
Issue
9
Year of publication
1994
Pages
1073 - 1075
Database
ISI
SICI code
1041-1135(1994)6:9<1073:STBIGS>2.0.ZU;2-4
Abstract
Strained-layer InGaAs-GaAs-AlGaAs single quantum well buried heterostr ucture lasers grown by selective-area MOCVD are described. Threshold c urrents of 2.65 mA for an uncoated device and 0.97 mA for a coated dev ice have been obtained. A peak optical output power of 170 mW per unco ated facet for a device with a 4 mum active region width was also achi eved. Peak emissions wavelengths range from 0.956 to 1.032 mum.