TAPERED THICKNESS MQW WAVE-GUIDE BH MQW LASERS

We propose and demonstrate a novel 1.3 mum InGaAsP/InGaAsP multiple-qu antum-well (MQW) BH Fabry-Perot laser diode monolithically integrated with a MQW tapered thickness waveguide. A selective area growth (SAG) technique is used to fabricate the tapered thickness waveguide with lo w absorption loss and to integrate it with the MQW gain region with a high coupling efficiency. We achieve very narrow vertical and lateral far-field FWHM of 11.8-degrees and 8.0-degrees, with low threshold cur rent of 19 mA and high slope efficiency of 0.25 mW/mA.