LOSS REDUCTION IN INGAAS INGAALAS QUANTUM-WELL ELECTRON-TRANSFER WAVE-GUIDES USING ION-IMPLANTATION/

We demonstrate that phosphorous ion implantation is an effective means of blue-shifting the absorption edge in InGaAs/InGaAlAs barrier, rese rvoir and quantum well electron transfer structures (BRAQWETS). The el ectroabsorption peak is wavelength-shifted by 100 nm after implant, wi th a complete recovery of the electroabsorption magnitude after an app ropriate rapid thermal anneal cycle. Good electrical characteristics a re also maintained after implant and anneal. We apply this technique t o loss reduction for BRAQWETS waveguide devices. At 1.523 mm, the impl ant and anneal results in a decrease of rib waveguide propagation loss from 79.4 dB/mm to 6.2 dB/mm.