ORIGIN OF RESIDUAL-STRESS IN A TEXTURED AU THIN-FILM ON A LIF SUBSTRATE

The results of residual stress and texture measurements by X-ray diffr action of a Au thin film sputtered on a LiF substrate at 300-degrees-C are presented. The residual stress (determined by the ''sin2PSI'' met hod) in the film is about -300 MPa and the intra-granular structure is close to the bulk one. A texture and a high crystallinity with a cohe rency relationship between the [1BAR01] Au and the [011] LiF direction s was observed. These results are compared to those obtained for Au th in films deposited on oxidized silicon. In the case of Au on LiF subst rate, the origin of stress generation during the film growth is mainly due to the difference between the thermal expansion coefficients of t he film and the substrate and not to a crystallographic coherency rela tionship.