The segregation of S in electrotransport-purified polycrystalline alph
a-Ti and in several polycrystalline Ti alloys has been studied by Auge
r electron spectroscopy and ion scattering spectroscopy in the tempera
ture range extending from 20 to 1000-degrees-C. The chemisorbed oxygen
and carbon on Ti were observed to disappear at T > 400-degrees-C afte
r which the S signal increased to levels approaching 0.5 monolayer. At
lower temperatures the presence of the surface oxygen and carbon appe
ared to inhibit the segregation, presumably because there were no avai
lable surfaces sites for the S emerging from the bulk. The activation
energy for the S segregation in pure polycrystalline Ti was determined
to be 16.7 kcal/mol, which, when compared to S segregation from singl
e-crystal Ti, is quite small and suggests grain boundary or defect dif
fusion segregation kinetics. In the Ti-aluminide alloys, the presence
of Al appeared to enhance the retention of surface oxygen which, in tu
rn, substantially reduced the S segregation. The gamma alloy, with its
high Al content, exhibited the greatest retention of surface oxygen a
nd the smallest quantity of S segregation (T almost-equal-to 1000-degr
ees-C). On the other hand, the beta-21S alloy exhibited a greater segr
egation rate for the S than did alpha-Ti.