AN ULTRA-LOW NOISE CRYOGENIC KA-BAND INGAAS INALAS/INP HEMT FRONT-ENDRECEIVER/

Authors
LAI R BAUTISTA JJ FUJIWARA B TAN KL NG GI DIA RM STREIT D LIU PH FREUDENTHAL A LASKAR J POSPIEZALSKI MW
Citation
R. Lai et al., AN ULTRA-LOW NOISE CRYOGENIC KA-BAND INGAAS INALAS/INP HEMT FRONT-ENDRECEIVER/, IEEE microwave and guided wave letters, 4(10), 1994, pp. 329-331
Citations number
NO
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
IEEE microwave and guided wave letters → ACNP
ISSN journal
10518207
Volume
4
Issue
10
Year of publication
1994
Pages
329 - 331
Database
ISI
SICI code
1051-8207(1994)4:10<329:AUNCKI>2.0.ZU;2-2
Abstract
We present here the design and performance of a 4-stage Ka-band cryoge nic amplifier using a front-end 0.1-0.1-mum gate length InP HEMT. The amplifier demonstrated 20-25 K uncorrected noise temperature (approxim ately 0.3-dB noise figure) from 31-33 GHz with 30-33 dB associated gai n at 12 K ambient temperature. To date, this is the best reported HEMT cryogenic amplifier performance at this frequency band and is a facto r of two improvement in noise temperature compared to previous designs .