Th. Lee et al., A NOVEL BIASED ANTI-PARALLEL SCHOTTKY DIODE STRUCTURE FOR SUBHARMONICMIXING, IEEE microwave and guided wave letters, 4(10), 1994, pp. 341-343
Subharmonically pumped mixers using zero-biased anti-parallel Schottky
diode pairs produce good results, but require a larger LO power than
biased Schottky diodes. Presented here is a novel planar-diode anti-pa
rallel pair that allows independent biasing of the two diodes. This di
ode pair is integrated into a quasi-optical wideband receiver and the
RF measurements on a 1.2-mum anode diameter pair show a reduced LO pow
er requirement at 180 GHz by a factor of 2 to 3 with a similar DSB con
version loss and noise temperature (9.7 dB and 1850-degrees-K) to an u
nbiased Schottky diode pair. This structure has potential for applicat
ions at submillimeter-wave frequencies where a large amount of LO powe
r is not easily available.