ELECTROLUMINESCENCE QUANTUM YIELD IN GAINASSB GASB AND ALGAASSB/GAINASSB P-N STRUCTURES/

The quantum yield of the electroluminescence in LED structures based o n GaInAsSb grown from melts rich in antimony has been studied experime ntally. These diodes emit in the region 1.8-2.5 mum. The values of the external quantum yield are eta(e)300 less-than-or-equal-to 3-4%. The better values are found in double heterostructures with wide-gap AlGaA sSb layers. The temperature dependence of eta(e) near 300 K can be exp lained on the basis of mechanisms of radiative recombination, nonradia tive Auger recombination, and a phonon-stimulated trapping of holes in deep acceptor levels followed by nonradiative recombination. (C) 1994 American Institute of Physics.