Vidicon targets fabricated from pseudodoped amorphous silicon have bee
n studied. The density of states in the lower half of the mobility gap
has been found by a method of space-charge-limited photocurrents. Cor
relations between the characteristics of the target and the parameters
of its i layer have been determined. The characteristics of targets b
ased on pseudodoped and doped amorphous silicon are shown to be the sa
me. Several advantages of the pseudodoping method are pointed out. (C)
1994 American Institute of Physics.