PSEUDODOPED AMORPHOUS-SILICON AS A MATERIAL FOR VIDICON TARGETS

Citation
Oa. Golikova et al., PSEUDODOPED AMORPHOUS-SILICON AS A MATERIAL FOR VIDICON TARGETS, Semiconductors, 28(9), 1994, pp. 887-889
Citations number
9
Categorie Soggetti
Physics, Condensed Matter
Journal title
ISSN journal
10637826
Volume
28
Issue
9
Year of publication
1994
Pages
887 - 889
Database
ISI
SICI code
1063-7826(1994)28:9<887:PAAAMF>2.0.ZU;2-V
Abstract
Vidicon targets fabricated from pseudodoped amorphous silicon have bee n studied. The density of states in the lower half of the mobility gap has been found by a method of space-charge-limited photocurrents. Cor relations between the characteristics of the target and the parameters of its i layer have been determined. The characteristics of targets b ased on pseudodoped and doped amorphous silicon are shown to be the sa me. Several advantages of the pseudodoping method are pointed out. (C) 1994 American Institute of Physics.