PSEUDODOPED AMORPHOUS-SILICON AS A MATERIAL FOR VIDICON TARGETS

Vidicon targets fabricated from pseudodoped amorphous silicon have bee n studied. The density of states in the lower half of the mobility gap has been found by a method of space-charge-limited photocurrents. Cor relations between the characteristics of the target and the parameters of its i layer have been determined. The characteristics of targets b ased on pseudodoped and doped amorphous silicon are shown to be the sa me. Several advantages of the pseudodoping method are pointed out. (C) 1994 American Institute of Physics.