TEMPERATURE-DEPENDENCE OF THE CRITICAL DOSE OF DEFECTS FOR THE TRANSITION OF SILICON TO THE AMORPHOUS STATE AS A RESULT OF ION-IMPLANTATION

Authors
GUSAKOV GA NOVIKOV AP ANISHCHIK VM
Citation
Ga. Gusakov et al., TEMPERATURE-DEPENDENCE OF THE CRITICAL DOSE OF DEFECTS FOR THE TRANSITION OF SILICON TO THE AMORPHOUS STATE AS A RESULT OF ION-IMPLANTATION, Semiconductors, 28(9), 1994, pp. 931-934
Citations number
10
Categorie Soggetti
Physics, Condensed Matter
Journal title
Semiconductors → ACNP
ISSN journal
10637826
Volume
28
Issue
9
Year of publication
1994
Pages
931 - 934
Database
ISI
SICI code
1063-7826(1994)28:9<931:TOTCDO>2.0.ZU;2-#
Abstract
A model for ion-induced amorphization of a semiconductor, in which the nature of the produced radiation defects and the structure of the fin al amorphous state are taken into account, is proposed. The results of a computer simulation of silicon bombarded by As, P, and B ions are i n satisfactory agreement with the experimental data. (C) 1994 American Institute of Physics.