INGAAS GAAS QUANTUM-WELL LASERS WITH DRY-ETCHED MIRROR PASSIVATED BY VACUUM ATOMIC LAYER EPITAXY/

Authors
FRATESCHI NC JOW MY DAPKUS PD LEVI AFJ
Citation
Nc. Frateschi et al., INGAAS GAAS QUANTUM-WELL LASERS WITH DRY-ETCHED MIRROR PASSIVATED BY VACUUM ATOMIC LAYER EPITAXY/, Applied physics letters, 65(14), 1994, pp. 1748-1750
Citations number
7
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
14
Year of publication
1994
Pages
1748 - 1750
Database
ISI
SICI code
0003-6951(1994)65:14<1748:IGQLWD>2.0.ZU;2-3
Abstract
We report measurements of strained InGaAs/GaAs quantum well laser diod es with electron cyclotron resonance (ECR) plasma etched mirrors that are passivated and smoothed with a novel technique involving the selec tive area growth of GaAs by vacuum atomic layer epitaxy. The threshold current of as-cleaved, etched, and passivated devices has been studie d and a significant improvement in mirror feedback is shown with the p assivation and smoothing of etched mirrors oriented along the [001] pl anes. (C) 1994 American Institute of Physics.