PERSISTENT ROOM-TEMPERATURE RELAXATION OF INP AMORPHIZED AND COMPACTED BY MEV ION-BEAMS

Authors
CLICHE L ROORDA S MASUT RA
Citation
L. Cliche et al., PERSISTENT ROOM-TEMPERATURE RELAXATION OF INP AMORPHIZED AND COMPACTED BY MEV ION-BEAMS, Applied physics letters, 65(14), 1994, pp. 1754-1756
Citations number
14
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
14
Year of publication
1994
Pages
1754 - 1756
Database
ISI
SICI code
0003-6951(1994)65:14<1754:PRROIA>2.0.ZU;2-E
Abstract
Ion beam induced deformation and compaction has been observed in InP, amorphized by MeV Se ion implantation. The initial density of amorphou s InP is 0.55%+/-0.05% larger than that of crystalline InP. During a p eriod of two months, most of the excess density is lost in a spontaneo us, room-temperature relaxation. This relaxation can be described by t wo time constants: tau1 almost-equal-to 8 +/- 2 h and tau2 almost-equa l-to 14 +/- 1 days. (C) 1994 American Institute of Physics.