DIRECT OBSERVATION OF INTERFACE AND SURFACE STEPS IN EPITAXIAL-FILMS BY DARK-FIELD TRANSMISSION ELECTRON-MICROSCOPY

Authors
LORETTO D ROSS FM LUCAS CA WONG GCL
Citation
D. Loretto et al., DIRECT OBSERVATION OF INTERFACE AND SURFACE STEPS IN EPITAXIAL-FILMS BY DARK-FIELD TRANSMISSION ELECTRON-MICROSCOPY, Applied physics letters, 65(14), 1994, pp. 1766-1768
Citations number
18
Categorie Soggetti
Physics, Applied
Journal title
Applied physics letters → ACNP
ISSN journal
00036951
Volume
65
Issue
14
Year of publication
1994
Pages
1766 - 1768
Database
ISI
SICI code
0003-6951(1994)65:14<1766:DOOIAS>2.0.ZU;2-5
Abstract
We have used dark-field transmission electron microscopy to investigat e <5 nm thick CaF2 films grown on Si(111) by molecular-beam epitaxy. I mages formed with CaF2 [111BAR] reflections exhibit contrast at 1/3[11 1] height steps at the CaF2 surface and at the CaF2/Si interface over large (> 100 mum2), statistically significant areas. Direct evidence f or step-flow growth in CaF2 has been obtained. (C) 1994 American Insti tute of Physics.