B. Zhao et al., SUB-100-MU - A CURRENT OPERATION OF STRAINED INGAAS QUANTUM-WELL LASERS AT LOW-TEMPERATURES, Applied physics letters, 65(14), 1994, pp. 1805-1807
Very low threshold currents (< 100 muA) have been achieved in InGaAs s
trained single quantum well lasers at cryogenic temperatures. Threshol
d currents of 38 and 56 muA and external quantum efficiency approximat
ely 1 mW/mA have been demonstrated under cw operation condition at tem
peratures of 6 and 77 K, respectively. The external quantum efficiency
increased by about a factor of 2 at low temperatures (< 100 K) in com
parison to that at room temperature. These results are relevant to the
prospect of integration of semiconductor lasers with low temperature
electronics for high performance (C) 1994 American Institute of Physic
s.