FABRICATION OF ELECTROABSORPTION OPTICAL MODULATORS USING LASER DISORDERED GAINAS GAINASP MULTIQUANTUM-WELL STRUCTURES/

Authors
LULLO G MCKEE A MCLEAN CJ BRYCE AC BUTTON C MARSH JH
Citation
G. Lullo et al., FABRICATION OF ELECTROABSORPTION OPTICAL MODULATORS USING LASER DISORDERED GAINAS GAINASP MULTIQUANTUM-WELL STRUCTURES/, Electronics Letters, 30(19), 1994, pp. 1623-1625
Citations number
5
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
19
Year of publication
1994
Pages
1623 - 1625
Database
ISI
SICI code
0013-5194(1994)30:19<1623:FOEOMU>2.0.ZU;2-O
Abstract
Electroabsorption optical modulators have been fabricated on GaInAs/Ga InAsP multiquantum well structures whose bandgap had been increased by laser photoabsorption-induced disordering. Modulation depths of 20dB have been obtained in material which has been bandgap blue shifted by as much as 120mm, while samples shifted by 80nm gave depths as high as 27dB.