SUBQUARTER-MICROMETER ELEVATED SOURCE-AND-DRAIN MOSFET STRUCTURE USING POLYSILICON SPACERS

Authors
MIRABEDINI MR GOODWINJOHANSSON SH MASSOUD HZ FAIR RB
Citation
Mr. Mirabedini et al., SUBQUARTER-MICROMETER ELEVATED SOURCE-AND-DRAIN MOSFET STRUCTURE USING POLYSILICON SPACERS, Electronics Letters, 30(19), 1994, pp. 1631-1632
Citations number
6
Categorie Soggetti
Engineering, Eletrical & Electronic
Journal title
Electronics Letters → ACNP
ISSN journal
00135194
Volume
30
Issue
19
Year of publication
1994
Pages
1631 - 1632
Database
ISI
SICI code
0013-5194(1994)30:19<1631:SESMSU>2.0.ZU;2-Q
Abstract
A novel subquarter-micrometre MOSFET with a selfaligned source and dra in structure is proposed with elevated sources and drains formed by us ing polysilicon spacers. The spacers can reduce the effective channel length by 50% compared to the mask length, and reduce the junction cap acitance by over 30% through a reduction in junction area, as shown by PISCES simulations. A graded oxide spacer is used to decrease the par asitic gate-to-drain capacitance.