A CURRENT MEMORY CELL WITH SWITCH FEEDTHROUGH REDUCTION BY ERROR FEEDBACK

A new switch feedthrough suppressing current memory cell, capable of a ccurately memorizing low current levels is presented. The scheme opera tes by feeding back a fraction of the error current to the storage nod e whose voltage is adjusted so that the error is reduced to zero. Usin g the feedback compensation scheme, absolute current error of less tha n 0.1% was achieved even at ultra-low current levels of 10 nA. The neg ative feedback circuit consumes negligibly low power and can be laid i n a very small area. With this scheme, memory accuracy is traded for e rror correction speed, a feature common to all feedback-based switch f eedthrough reduction schemes. The feedback compensated current memory cell can be used for low-power high-background infrared focal-plane re adout electronics featuring in-pixel background suppression.