DEEP-LEVEL TRANSIENT SPECTROSCOPY OF ANISOTROPIC SEMICONDUCTOR GATE

Deep level transient spectroscopy (DLTS) was carried out on single cry stals of the layered chalcogenide p-GaTe using Schottky barriers paral lel and perpendicular to the layer planes to study the possible anisot ropy of the defect levels. Deep levels with the same energies (0.28 eV and 0.42-0.45 eV) have been found in both directions with concentrati ons ranging from 10(13)cm(-3) to 10(14)cm(-3) and capture cross-sectio ns from 10(-15)cm(2) to 10(-17)cm(2). The difference in the spectra ob tained from the two planes and the possible reason for the deep level energies being independent of crystal orientation are discussed.