BEHAVIOR OF SWITCHING PHENOMENA IN SINGLE-CRYSTALS OF TLGATE2

Citation
Mm. Nassary et al., BEHAVIOR OF SWITCHING PHENOMENA IN SINGLE-CRYSTALS OF TLGATE2, Crystal research and technology, 29(6), 1994, pp. 869-873
Citations number
11
Categorie Soggetti
Crystallography
ISSN journal
02321300
Volume
29
Issue
6
Year of publication
1994
Pages
869 - 873
Database
ISI
SICI code
0232-1300(1994)29:6<869:BOSPIS>2.0.ZU;2-L
Abstract
Current-voltage characteristics measured on TlGaTe2 single crystals re veal switching effects at temperatures below 263 K. The current-voltag e characteristics are symmetric with respect to the polarity of the ap plied field. The threshold parameters for switching are found to depen d on temperature, illumination intensity and sample thickness.